{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780179","patent":{"patent_number":"US-9780179","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-06-18T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":3,"abstract":"A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate; a first pillar-shaped semiconductor layer formed on the semiconductor substrate and including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer; a first gate insulating film around the first body region; a first gate around the first gate insulating film; a second gate insulating film around the second body region; a second gate around the second gate insulating film; an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; and a first contact that connects the first gate and the second gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate; a first pillar-shaped semiconductor layer formed on the semiconductor substrate and in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780179","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780179","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9780179). https://patentable.app/patents/US-9780179","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780179","json":"https://patentable.app/api/llm-context/US-9780179","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:15.660Z"}