{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780181","patent":{"patent_number":"US-9780181","title":"Semiconductor device with multi-function P-type diamond gate","assignee":null,"inventors":[],"filing_date":"2016-12-07T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate, a back-barrier layer arranged on the substrate, the back-barrier layer including first p-type dopant atoms, an intermediate or nucleation layer having a lattice constant different from a lattice constant of the back-barrier layer, a semiconductor heterostructure having a channel layer, a spacer layer on the channel layer and a barrier layer on the spacer layer, wherein a combination of materials of the barrier layer, the spacer layer and the channel layer is selected such that a carrier charge is provided to the channel layer, a gate layer arranged to partially cover a top of the barrier layer, wherein the gate layer includes second p-type dopant atoms, and a set of electrodes for providing and controlling the carrier charge in the carrier channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with multi-function P-type diamond gate","description":"A semiconductor device includes a substrate, a back-barrier layer arranged on the substrate, the back-barrier layer including first p-type dopant atoms, an intermediate or nucleation layer having a la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780181","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780181","citation_suggestion":"Patentable. \"Semiconductor device with multi-function P-type diamond gate\" (US-9780181). https://patentable.app/patents/US-9780181","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780181","json":"https://patentable.app/api/llm-context/US-9780181","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:07:53.517Z"}