{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780191","patent":{"patent_number":"US-9780191","title":"Method of forming spacers for a gate of a transistor","assignee":null,"inventors":[],"filing_date":"2016-01-15T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":42,"abstract":"The invention describes a method for forming spacers (152a, 152b) of a field effect transistor gate, comprising a step of forming a protection layer (152) covering the gate of said transistor, at least a step of modifying the protection layer, executed after the step of forming the protection layer, by contacting the protection layer (152) with plasma comprising ions heavier than hydrogen and CxHy where x is the proportion of carbon and y is the proportion of hydrogen to form a modified protection layer (158) and a carbon film (271). The protection layer being nitride (N)-based and/or silicon (Si)-based and/or carbon (C)-based and shows a dielectric constant equal or less than 8."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming spacers for a gate of a transistor","description":"The invention describes a method for forming spacers (152a, 152b) of a field effect transistor gate, comprising a step of forming a protection layer (152) covering the gate of said transistor, at leas","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780191","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780191","citation_suggestion":"Patentable. \"Method of forming spacers for a gate of a transistor\" (US-9780191). https://patentable.app/patents/US-9780191","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780191","json":"https://patentable.app/api/llm-context/US-9780191","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:05.540Z"}