{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780198","patent":{"patent_number":"US-9780198","title":"Method for manufacturing high-performance and low-power field effect transistor of which surface roughness scattering is minimized or removed","assignee":null,"inventors":[],"filing_date":"2014-12-09T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":4,"abstract":"Aspects of the present invention relate to a method for manufacturing a high-performance and low-power field effect transistor (FET) element of which surface roughness scattering is minimized or removed, comprising: a first step of etching a strained silicon substrate into a pin structure; a second step of stacking undoped SiGe thereon; a third step of etching the undoped SiGe; a fourth step of etching after performing lithography; a fifth step of stacking doped SiGe thereon; a sixth step of etching the doped SiGe after performing lithography; and a step of forming a transistor element by sequentially stacking an oxide and a gate metal on the doped SiGe and there is an effect of enabling the implementation of a Fin HEMT capable of having all of good channel controllability and a high on-current, which are advantages of a FinFET, and high electron mobility, which is an advantage of an HEMT."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing high-performance and low-power field effect transistor of which surface roughness scattering is minimized or removed","description":"Aspects of the present invention relate to a method for manufacturing a high-performance and low-power field effect transistor (FET) element of which surface roughness scattering is minimized or remov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780198","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780198","citation_suggestion":"Patentable. \"Method for manufacturing high-performance and low-power field effect transistor of which surface roughness scattering is minimized or removed\" (US-9780198). https://patentable.app/patents/US-9780198","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780198","json":"https://patentable.app/api/llm-context/US-9780198","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:51:22.442Z"}