{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780199","patent":{"patent_number":"US-9780199","title":"Method for forming semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-23T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method of forming a semiconductor device includes following steps. Firstly, a gate structure is formed on a substrate, and two source/drain regions are formed. Then, a contact etching stop layer (CESL) is formed to cover the source/drain regions, and a first interlayer dielectric (ILD) layer is formed on the CESL. Next, a replace metal gate process is performed to form a metal gate and a capping layer on the metal gate, and a second ILD layer is formed on the first ILD layer. Following these, a first opening is formed in the second and first ILD layers to partially expose the CESL, and a second opening is formed in the second ILD to expose the capping layer. Finally, the CESL and the capping layer are simultaneously removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device","description":"A method of forming a semiconductor device includes following steps. Firstly, a gate structure is formed on a substrate, and two source/drain regions are formed. Then, a contact etching stop layer (CE","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780199","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780199","citation_suggestion":"Patentable. \"Method for forming semiconductor device\" (US-9780199). https://patentable.app/patents/US-9780199","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780199","json":"https://patentable.app/api/llm-context/US-9780199","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:01.638Z"}