{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780207","patent":{"patent_number":"US-9780207","title":"Self-aligned high voltage LDMOS","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Devices and methods for forming a device are disclosed. The method includes providing a crystalline-on-insulator substrate having a bulk substrate and a surface substrate separated by a buried insulator layer. The surface substrate is defined with a device region. A transistor having a gate is formed in the device region. A first diffusion region is formed adjacent to a first side of the gate and a second diffusion region is formed adjacent to and displaced away from a second side of the gate. At least a first drift isolation region is formed in the surface substrate adjacent to and underlaps the second side of the gate. A drift well is formed in the surface substrate encompassing the first drift isolation region. A device isolation region surrounding the device region is formed in the surface substrate. The device isolation region includes a second depth which is deeper than a first depth of the first drift isolation region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned high voltage LDMOS","description":"Devices and methods for forming a device are disclosed. The method includes providing a crystalline-on-insulator substrate having a bulk substrate and a surface substrate separated by a buried insulat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780207","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780207","citation_suggestion":"Patentable. \"Self-aligned high voltage LDMOS\" (US-9780207). https://patentable.app/patents/US-9780207","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780207","json":"https://patentable.app/api/llm-context/US-9780207","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:49:13.716Z"}