{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780210","patent":{"patent_number":"US-9780210","title":"Backside semiconductor growth","assignee":null,"inventors":[],"filing_date":"2016-08-11T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H04B","H04B","H01L","H01L","H01L"],"num_claims":30,"abstract":"An integrated circuit structure may include a transistor on a front-side semiconductor layer supported by an isolation layer. The transistor is a first source/drain/body region. The integrated circuit structure may also include a raised source/drain/body region coupled to a backside of the first source/drain/body region of the transistor. The transistor is a raised source/drain/body region extending from the backside of the first source/drain/body region toward a backside dielectric layer supporting the isolation layer. The integrated circuit structure may further include a backside metallization coupled to the raised source/drain/body region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Backside semiconductor growth","description":"An integrated circuit structure may include a transistor on a front-side semiconductor layer supported by an isolation layer. The transistor is a first source/drain/body region. The integrated circuit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780210","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780210","citation_suggestion":"Patentable. \"Backside semiconductor growth\" (US-9780210). https://patentable.app/patents/US-9780210","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780210","json":"https://patentable.app/api/llm-context/US-9780210","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:33:43.520Z"}