{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780213","patent":{"patent_number":"US-9780213","title":"Semiconductor device having a reversed T-shaped profile in the metal gate line-end","assignee":null,"inventors":[],"filing_date":"2014-04-15T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a reversed T-shaped profile in the metal gate line-end","description":"A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780213","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780213","citation_suggestion":"Patentable. \"Semiconductor device having a reversed T-shaped profile in the metal gate line-end\" (US-9780213). https://patentable.app/patents/US-9780213","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780213","json":"https://patentable.app/api/llm-context/US-9780213","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:25.322Z"}