{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780214","patent":{"patent_number":"US-9780214","title":"Semiconductor device including Fin- FET and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2014-12-22T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A semiconductor device includes a first fin structure for a first fin field effect transistor (FET). The first fin structure includes a first base layer protruding from a substrate, a first intermediate layer disposed over the first base layer and a first channel layer disposed over the first intermediate layer. The first fin structure further includes a first protective layer made of a material that prevents an underlying layer from oxidation. The first channel layer is made of SiGe, the first intermediate layer includes a first semiconductor (e.g., SiGe) layer disposed over the first base layer and a second semiconductor layer (e.g., Si) disposed over the first semiconductor layer. The first protective layer covers side walls of the first base layer, side walls of the first semiconductor layer and side walls of the second semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including Fin- FET and manufacturing method thereof","description":"A semiconductor device includes a first fin structure for a first fin field effect transistor (FET). The first fin structure includes a first base layer protruding from a substrate, a first intermedia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780214","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780214","citation_suggestion":"Patentable. \"Semiconductor device including Fin- FET and manufacturing method thereof\" (US-9780214). https://patentable.app/patents/US-9780214","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780214","json":"https://patentable.app/api/llm-context/US-9780214","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:59:41.529Z"}