{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780215","patent":{"patent_number":"US-9780215","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-04T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":3,"abstract":"A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate; a fourth step of forming a fifth insulating film and a sixth insulating film; a fifth step of depositing a first interlayer insulating film, removing the second dummy gate and the first dummy gate, forming a gate insulating film, depositing metal, and performing etch back to form a gate electrode and a gate line; a seventh step of forming a seventh insulating film; and an eighth step of forming insulating film sidewalls, forming a first epitaxially grown layer on the fin-shaped semiconductor layer, and forming a second epitaxially grown layer on the pillar-shaped semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of formi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780215","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780215","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9780215). https://patentable.app/patents/US-9780215","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780215","json":"https://patentable.app/api/llm-context/US-9780215","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:45.945Z"}