{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780216","patent":{"patent_number":"US-9780216","title":"Combination FinFET and methods of forming same","assignee":null,"inventors":[],"filing_date":"2014-03-19T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An embodiment fin field effect transistor (finFET) includes a fin extending upwards from a semiconductor substrate and a gate stack. The fin includes a channel region. The gate stack is disposed over and covers sidewalls of the channel region. The channel region includes at least two different semiconductor materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Combination FinFET and methods of forming same","description":"An embodiment fin field effect transistor (finFET) includes a fin extending upwards from a semiconductor substrate and a gate stack. The fin includes a channel region. The gate stack is disposed over ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780216","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780216","citation_suggestion":"Patentable. \"Combination FinFET and methods of forming same\" (US-9780216). https://patentable.app/patents/US-9780216","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780216","json":"https://patentable.app/api/llm-context/US-9780216","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:33:31.095Z"}