{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780232","patent":{"patent_number":"US-9780232","title":"Memory semiconductor device with peripheral circuit multi-layer conductive film gate electrode and method of manufacture","assignee":null,"inventors":[],"filing_date":"2016-02-19T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory semiconductor device with peripheral circuit multi-layer conductive film gate electrode and method of manufacture","description":"To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780232","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780232","citation_suggestion":"Patentable. \"Memory semiconductor device with peripheral circuit multi-layer conductive film gate electrode and method of manufacture\" (US-9780232). https://patentable.app/patents/US-9780232","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780232","json":"https://patentable.app/api/llm-context/US-9780232","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:20.557Z"}