{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780299","patent":{"patent_number":"US-9780299","title":"Multilayer structure for reducing film roughness in magnetic devices","assignee":null,"inventors":[],"filing_date":"2015-11-23T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":19,"abstract":"A seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a seed layer such as Mg where the seed layer has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed layer is a template layer that is NiCr or NiFeCr. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited. The seed layer stack may include a bottommost Ta or TaN buffer layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilayer structure for reducing film roughness in magnetic devices","description":"A seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a seed layer such as Mg where the seed layer has a resputte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780299","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780299","citation_suggestion":"Patentable. \"Multilayer structure for reducing film roughness in magnetic devices\" (US-9780299). https://patentable.app/patents/US-9780299","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780299","json":"https://patentable.app/api/llm-context/US-9780299","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:03:33.776Z"}