{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780300","patent":{"patent_number":"US-9780300","title":"Magnetic memory element with composite perpendicular enhancement layer","assignee":null,"inventors":[],"filing_date":"2016-11-30T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C","B82Y"],"num_claims":22,"abstract":"The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The non-magnetic perpendicular enhancement layer includes a first perpendicular enhancement sublayer formed adjacent to the first magnetic reference layer and a second perpendicular enhancement sublayer formed adjacent to the second magnetic reference layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory element with composite perpendicular enhancement layer","description":"The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780300","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780300","citation_suggestion":"Patentable. \"Magnetic memory element with composite perpendicular enhancement layer\" (US-9780300). https://patentable.app/patents/US-9780300","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780300","json":"https://patentable.app/api/llm-context/US-9780300","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:21.128Z"}