{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786368","patent":{"patent_number":"US-9786368","title":"Two stage forming of resistive random access memory cells","assignee":null,"inventors":[],"filing_date":"2014-11-24T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating these cells. Two metal oxides used in the same cell have different dielectric constants, such as silicon oxide and hafnium oxide. The memory cell may include electrodes having different metals. Diffusivity of these metals into interfacing metal oxide layers may be different. Specifically, the lower-k oxide may be less prone to diffusion of the metal from the interfacing electrode than the higher-k oxide. The memory cell may be formed to different stable resistive levels and then resistively switched at these levels. Each level may use a different switching power. The switching level may be selected a user after fabrication of the cell and in, some embodiments, may be changed, for example, after switching the cell at a particular level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Two stage forming of resistive random access memory cells","description":"Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786368","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786368","citation_suggestion":"Patentable. \"Two stage forming of resistive random access memory cells\" (US-9786368). https://patentable.app/patents/US-9786368","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786368","json":"https://patentable.app/api/llm-context/US-9786368","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:35.188Z"}