{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786382","patent":{"patent_number":"US-9786382","title":"Semiconductor device and memory element","assignee":null,"inventors":[],"filing_date":"2017-02-28T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L"],"num_claims":12,"abstract":"A memory element according to an embodiment includes: first through fourth impurity layers arranged in a semiconductor layer including first to third portions; a first gate wiring line disposed on the first portion located between the first and second impurity layers; a second gate wiring line disposed on the second portion located between the second and third impurity layers; a third gate wiring line disposed on the third portion located between the third and fourth impurity layers; a first insulating layer disposed between the first portion and the first gate wiring line; a second insulating layer disposed between the second portion and the second gate wiring line; a third insulating layer disposed between the third portion and the third gate wiring line; first wiring line electrically connected to the first through third gate wiring lines; and second wiring line electrically connected to the first through fourth impurity layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and memory element","description":"A memory element according to an embodiment includes: first through fourth impurity layers arranged in a semiconductor layer including first to third portions; a first gate wiring line disposed on the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786382","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786382","citation_suggestion":"Patentable. \"Semiconductor device and memory element\" (US-9786382). https://patentable.app/patents/US-9786382","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786382","json":"https://patentable.app/api/llm-context/US-9786382","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:20:25.984Z"}