{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786471","patent":{"patent_number":"US-9786471","title":"Plasma etcher design with effective no-damage in-situ ash","assignee":null,"inventors":[],"filing_date":"2011-12-27T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma etcher design with effective no-damage in-situ ash","description":"In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786471","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786471","citation_suggestion":"Patentable. \"Plasma etcher design with effective no-damage in-situ ash\" (US-9786471). https://patentable.app/patents/US-9786471","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786471","json":"https://patentable.app/api/llm-context/US-9786471","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:13:04.474Z"}