{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786503","patent":{"patent_number":"US-9786503","title":"Method for increasing pattern density in self-aligned patterning schemes without using hard masks","assignee":null,"inventors":[],"filing_date":"2016-04-04T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: providing a substrate having a patterned resist layer and an underlying layer comprising a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist hardening process; performing a first conformal spacer deposition using an atomic layer deposition technique with an oxide, performing a spacer first reactive ion etch process and a first pull process on the first conformal layer, performing a second conformal spacer deposition using titanium oxide; performing a second spacer RIE process and a second pull process, generating a second spacer pattern; and transferring the second spacer pattern into the target layer, wherein targets include patterning uniformity, pulldown of structures, slimming of structures, aspect ratio of structures, and line width roughness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for increasing pattern density in self-aligned patterning schemes without using hard masks","description":"Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786503","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786503","citation_suggestion":"Patentable. \"Method for increasing pattern density in self-aligned patterning schemes without using hard masks\" (US-9786503). https://patentable.app/patents/US-9786503","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786503","json":"https://patentable.app/api/llm-context/US-9786503","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:15.635Z"}