{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786513","patent":{"patent_number":"US-9786513","title":"Manufacturing method for semiconductor device including first and second thermal treatments","assignee":null,"inventors":[],"filing_date":"2015-04-20T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"In a manufacturing method for a semiconductor device according to an embodiment, a first heat treatment to anneal or oxidize an SiC layer in an atmosphere where a gas including carbon (C) exists is applied. Further, the semiconductor device according to the embodiment includes: an SiC substrate having a first surface and a second surface; a first conductivity type SiC layer disposed on the first surface side of the SiC substrate, and including a low level density region having Z1/2 level density of 1×1011 cm−3 or less measured by deep level transient spectroscopy (DLTS); a second conductivity type SiC region disposed on a surface of the SiC layer; a first electrode disposed on the SiC region; and a second electrode disposed on the second surface side of the SiC substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method for semiconductor device including first and second thermal treatments","description":"In a manufacturing method for a semiconductor device according to an embodiment, a first heat treatment to anneal or oxidize an SiC layer in an atmosphere where a gas including carbon (C) exists is ap","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786513","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786513","citation_suggestion":"Patentable. \"Manufacturing method for semiconductor device including first and second thermal treatments\" (US-9786513). https://patentable.app/patents/US-9786513","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786513","json":"https://patentable.app/api/llm-context/US-9786513","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:36:29.333Z"}