{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786526","patent":{"patent_number":"US-9786526","title":"Selectivity in a xenon difluoride etch process","assignee":null,"inventors":[],"filing_date":"2010-09-27T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selectivity in a xenon difluoride etch process","description":"A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786526","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786526","citation_suggestion":"Patentable. \"Selectivity in a xenon difluoride etch process\" (US-9786526). https://patentable.app/patents/US-9786526","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786526","json":"https://patentable.app/api/llm-context/US-9786526","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:06:51.987Z"}