{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786547","patent":{"patent_number":"US-9786547","title":"Channel silicon germanium formation method","assignee":null,"inventors":[],"filing_date":"2016-04-21T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method of making a channel region in a semiconductor device includes providing a substrate having a first transistor area arranged adjacent to a second transistor area; growing an epitaxial layer on the second transistor area of the substrate; forming a trench in the substrate between the first transistor area and the second transistor area; performing a condensation technique to thermally mix materials of the epitaxial layer and the substrate; and filling the trench with a dielectric material to form a shallow trench isolation region between a first channel region of the first transistor and a second channel region of the second transistor; wherein performing the condensation technique is performed after forming the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Channel silicon germanium formation method","description":"A method of making a channel region in a semiconductor device includes providing a substrate having a first transistor area arranged adjacent to a second transistor area; growing an epitaxial layer on","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786547","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786547","citation_suggestion":"Patentable. \"Channel silicon germanium formation method\" (US-9786547). https://patentable.app/patents/US-9786547","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786547","json":"https://patentable.app/api/llm-context/US-9786547","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:48:59.068Z"}