{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786551","patent":{"patent_number":"US-9786551","title":"Trench structure for high performance interconnection lines of different resistivity and method of making same","assignee":null,"inventors":[],"filing_date":"2014-04-29T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"An integrated circuit includes a substrate with an interlevel dielectric layer positioned above the substrate. First trenches having a first depth are formed in the interlevel dielectric layer and a metal material fills the first trenches to form first interconnection lines. Second trenches having a second depth are also formed in the interlevel dielectric layer and filled with a metal material to form second interconnection lines. The first and second interconnection lines have a substantially equal pitch, which in a preferred implementation is a sub-lithographic pitch, and different resistivities due to the difference in trench depth. The first and second trenches are formed with an etching process through a hard mask having corresponding first and second openings of different depths. A sidewall image transfer process is used to define sub-lithographic structures for forming the first and second openings in the hard mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench structure for high performance interconnection lines of different resistivity and method of making same","description":"An integrated circuit includes a substrate with an interlevel dielectric layer positioned above the substrate. First trenches having a first depth are formed in the interlevel dielectric layer and a m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786551","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786551","citation_suggestion":"Patentable. \"Trench structure for high performance interconnection lines of different resistivity and method of making same\" (US-9786551). https://patentable.app/patents/US-9786551","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786551","json":"https://patentable.app/api/llm-context/US-9786551","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:22:08.478Z"}