{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786569","patent":{"patent_number":"US-9786569","title":"Overlay measurement and compensation in semiconductor fabrication","assignee":null,"inventors":[],"filing_date":"2016-10-26T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes receiving a device having a first layer and a second layer over the first layer, the first layer having a first overlay mark. The method further includes forming a first resist pattern over the second layer, the first resist pattern having a second overlay mark. The method further includes performing a first overlay measurement using the second overlay mark in the first resist pattern and the first overlay mark; and performing one or more first manufacturing processes, thereby transferring the second overlay mark into the second layer and removing the first resist pattern. The method further includes performing one or more second manufacturing processes that include forming a third layer over the second layer. After the performing of the one or more second manufacturing processes, the method includes performing a second overlay measurement using the second overlay mark in the second layer and the first overlay mark."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Overlay measurement and compensation in semiconductor fabrication","description":"A method includes receiving a device having a first layer and a second layer over the first layer, the first layer having a first overlay mark. The method further includes forming a first resist patte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786569","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786569","citation_suggestion":"Patentable. \"Overlay measurement and compensation in semiconductor fabrication\" (US-9786569). https://patentable.app/patents/US-9786569","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786569","json":"https://patentable.app/api/llm-context/US-9786569","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:52.415Z"}