{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786652","patent":{"patent_number":"US-9786652","title":"ESD protection with asymmetrical bipolar-based device","assignee":null,"inventors":[],"filing_date":"2015-09-15T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"An ESD protection device is fabricated in a semiconductor substrate that includes a semiconductor layer having a first conductivity type. A first well implantation procedure implants dopant of a second conductivity type in the semiconductor layer to form inner and outer sinker regions. The inner sinker region is configured to establish a common collector region of first and second bipolar transistor devices. A second well implantation procedure implants dopant of the first conductivity type in the semiconductor layer to form respective base regions of the first and second bipolar transistor devices. Conduction of the first bipolar transistor device is triggered by breakdown between the inner sinker region and the base region of the first bipolar transistor device. Conduction of the second bipolar transistor device is triggered by breakdown between the outer sinker region and the base region of the second bipolar transistor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"ESD protection with asymmetrical bipolar-based device","description":"An ESD protection device is fabricated in a semiconductor substrate that includes a semiconductor layer having a first conductivity type. A first well implantation procedure implants dopant of a secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786652","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786652","citation_suggestion":"Patentable. \"ESD protection with asymmetrical bipolar-based device\" (US-9786652). https://patentable.app/patents/US-9786652","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786652","json":"https://patentable.app/api/llm-context/US-9786652","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:07.403Z"}