{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786656","patent":{"patent_number":"US-9786656","title":"Integration of bipolar transistor into complimentary metal-oxide-semiconductor process","assignee":null,"inventors":[],"filing_date":"2016-08-19T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A fin heterojunction bipolar transistor (fin HBT) and a method of fabricating the fin HBT for integration with a fin complimentary metal-oxide-semiconductor (fin CMOS) into a BiCMOS fin device include forming a sub-collector layer on a substrate. The sub-collector layer includes silicon doped with arsenic (As+). A collector layer and base are patterned as fins along a first direction. An emitter layer is formed on the fins. The emitter layer is a continuous layer of epitaxially grown silicon. An oxide is deposited above the sub-collector layer, the base, and the emitter layer, and at least one contact is formed through the oxide to each of the sub-collector layer, the base, and the emitter layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integration of bipolar transistor into complimentary metal-oxide-semiconductor process","description":"A fin heterojunction bipolar transistor (fin HBT) and a method of fabricating the fin HBT for integration with a fin complimentary metal-oxide-semiconductor (fin CMOS) into a BiCMOS fin device include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786656","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786656","citation_suggestion":"Patentable. \"Integration of bipolar transistor into complimentary metal-oxide-semiconductor process\" (US-9786656). https://patentable.app/patents/US-9786656","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786656","json":"https://patentable.app/api/llm-context/US-9786656","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:12.071Z"}