{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786658","patent":{"patent_number":"US-9786658","title":"Fabrication method of a stack of electronic devices","assignee":null,"inventors":[],"filing_date":"2016-12-22T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication method of a stack of electronic devices","description":"This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure success","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786658","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786658","citation_suggestion":"Patentable. \"Fabrication method of a stack of electronic devices\" (US-9786658). https://patentable.app/patents/US-9786658","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786658","json":"https://patentable.app/api/llm-context/US-9786658","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:16.170Z"}