{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786681","patent":{"patent_number":"US-9786681","title":"Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar structure","assignee":null,"inventors":[],"filing_date":"2016-06-20T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"Memory-opening semiconductor material portions and support opening fill structures can be simultaneously formed through a first alternating stack of first insulating layers and first sacrificial material layers. Dopant species that retard or prevent etching of the material of the support opening fill structures can be implanted into an upper portion of each support opening fill structure, while memory-opening semiconductor material portions are masked from implantation. After formation of a second alternating stack and second openings therethrough, the sacrificial material of the memory-opening semiconductor material portions is removed while the support opening fill structures is not removed. Damage to the first sacrificial material layers during formation of the staircase contact region and resulting leakage paths from word lines to the substrate through support pillar structures can be avoided or reduced by not removing the support opening fill structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar structure","description":"Memory-opening semiconductor material portions and support opening fill structures can be simultaneously formed through a first alternating stack of first insulating layers and first sacrificial mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786681","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786681","citation_suggestion":"Patentable. \"Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar structure\" (US-9786681). https://patentable.app/patents/US-9786681","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786681","json":"https://patentable.app/api/llm-context/US-9786681","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:46:22.499Z"}