{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786682","patent":{"patent_number":"US-9786682","title":"Manufacturing method of semiconductor device including barrier pattern","assignee":null,"inventors":[],"filing_date":"2016-09-02T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"The invention is related to a method for manufacturing a semiconductor device having a barrier pattern. The method includes alternately forming first sacrificial layers and insulating layers forming channel patterns penetrating the first sacrificial layers and the insulating layers, and forming a slit penetrating the first sacrificial layers and the insulating layers. In order to form the barrier pattern, the method also includes forming openings by removing the first sacrificial layers through the slit, and respectively forming conductive layers in the openings. The conductive layers include first barrier patterns having inclined inner surfaces and metal patterns in the first barrier patterns."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device including barrier pattern","description":"The invention is related to a method for manufacturing a semiconductor device having a barrier pattern. The method includes alternately forming first sacrificial layers and insulating layers forming c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786682","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786682","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device including barrier pattern\" (US-9786682). https://patentable.app/patents/US-9786682","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786682","json":"https://patentable.app/api/llm-context/US-9786682","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:44.550Z"}