{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786741","patent":{"patent_number":"US-9786741","title":"Silicon carbide semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-06-13T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate insulating layer is arranged as being in contact with the main surface of the silicon carbide layer. The silicon carbide layer includes a drift region having a first conductivity type, a body region having a second conductivity type different from the first conductivity type and being in contact with the drift region, a source region having the first conductivity type and arranged as being spaced apart from the drift region by the body region, and a protruding region arranged to protrude from at least one side of the source region and the drift region into the body region, being in contact with the gate insulating layer, and having the first conductivity type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method for manufacturing the same","description":"A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate insulating layer is arranged as being in con","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786741","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786741","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method for manufacturing the same\" (US-9786741). https://patentable.app/patents/US-9786741","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786741","json":"https://patentable.app/api/llm-context/US-9786741","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:00.889Z"}