{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786754","patent":{"patent_number":"US-9786754","title":"Method for forming semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2017-02-06T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for forming a semiconductor device structure is provided. The method includes: forming a plurality of trenches in the substrate; forming a gate dielectric layer lining the trenches; filling the trenches with a gate material; etching back the gate material to expose an upper portion of the trenches; forming a first dielectric layer to refill the upper portion of the trenches, and to cover a substrate surface between the trenches; performing a first chemical mechanical planarization process to partially remove the first dielectric layer until the substrate surface between the trenches is exposed. The method also includes using the first dielectric layer in the upper portion of the trenches as an etching mask, etching the substrate through the exposed substrate surface to form a self-aligned contact opening between the trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device structure","description":"A method for forming a semiconductor device structure is provided. The method includes: forming a plurality of trenches in the substrate; forming a gate dielectric layer lining the trenches; filling t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786754","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786754","citation_suggestion":"Patentable. \"Method for forming semiconductor device structure\" (US-9786754). https://patentable.app/patents/US-9786754","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786754","json":"https://patentable.app/api/llm-context/US-9786754","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:19.270Z"}