{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786763","patent":{"patent_number":"US-9786763","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-11-09T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element of a pn junction type is formed and a rear surface region opposing the front surface region, the lattice defect layer being formed by injecting a charged particle to a first region in the rear surface region of the substrate; forming a laminated region, in which a first conductivity type impurity region and a second conductivity type impurity region are sequentially laminated from a rear surface side of the substrate toward the first region, in a second region in the rear surface region of the substrate, the first region being positioned deeper than the second region from a rear surface of the substrate; and selectively activating the laminated region by laser annealing after the formation of the laminated region and the lattice defect layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element of a pn junction type is formed and a rea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786763","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786763","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9786763). https://patentable.app/patents/US-9786763","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786763","json":"https://patentable.app/api/llm-context/US-9786763","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:37.618Z"}