{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786764","patent":{"patent_number":"US-9786764","title":"Fin-FET semiconductor device with a source/drain contact having varying different widths","assignee":null,"inventors":[],"filing_date":"2015-10-22T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin-FET semiconductor device with a source/drain contact having varying different widths","description":"A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786764","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786764","citation_suggestion":"Patentable. \"Fin-FET semiconductor device with a source/drain contact having varying different widths\" (US-9786764). https://patentable.app/patents/US-9786764","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786764","json":"https://patentable.app/api/llm-context/US-9786764","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:51:26.353Z"}