{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786766","patent":{"patent_number":"US-9786766","title":"Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode and a junction region","assignee":null,"inventors":[],"filing_date":"2015-03-10T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A semiconductor device includes a gate electrode formed on a sidewall of a structure extending from a semiconductor substrate. A junction region is form in the structure to a first depth from a top of the structure and formed to overlap the gate electrode. A protection layer is formed between an outer wall of the structure and the gate electrode to a second depth less than the first depth from the top of the structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode and a junction region","description":"A semiconductor device includes a gate electrode formed on a sidewall of a structure extending from a semiconductor substrate. A junction region is form in the structure to a first depth from a top of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786766","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786766","citation_suggestion":"Patentable. \"Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode and a junction region\" (US-9786766). https://patentable.app/patents/US-9786766","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786766","json":"https://patentable.app/api/llm-context/US-9786766","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:26.122Z"}