{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9786806","patent":{"patent_number":"US-9786806","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-12-22T00:00:00.000Z","publication_date":"2017-10-10T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":16,"abstract":"A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9786806","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9786806","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9786806). https://patentable.app/patents/US-9786806","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9786806","json":"https://patentable.app/api/llm-context/US-9786806","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:27:47.584Z"}