{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9792976","patent":{"patent_number":"US-9792976","title":"Memory device including delay circuit having gate insulation films with thicknesses different from each other","assignee":null,"inventors":[],"filing_date":"2016-07-11T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input signal and output an output signal, and circuit blocks configured to control an operation of reading or writing memory cell data in response to the input signal or the output signal. One of transistors constituting a circuit block has a gate insulation film having such a thickness that an effect of negative biased temperature instability (NBTI) or positive biased temperature instability (PBTI) on the transistors is minimized. The delay circuit may be affected little by a shift in a threshold voltage that may be caused by NTBI or PBTI, and thus, achieve target delay time."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device including delay circuit having gate insulation films with thicknesses different from each other","description":"Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9792976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9792976","citation_suggestion":"Patentable. \"Memory device including delay circuit having gate insulation films with thicknesses different from each other\" (US-9792976). https://patentable.app/patents/US-9792976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9792976","json":"https://patentable.app/api/llm-context/US-9792976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:00:48.719Z"}