{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793136","patent":{"patent_number":"US-9793136","title":"Plasma etching method","assignee":null,"inventors":[],"filing_date":"2015-12-04T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Plasma etching method","description":"A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793136","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793136","citation_suggestion":"Patentable. \"Plasma etching method\" (US-9793136). https://patentable.app/patents/US-9793136","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793136","json":"https://patentable.app/api/llm-context/US-9793136","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:36:02.449Z"}