{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793154","patent":{"patent_number":"US-9793154","title":"Method for manufacturing bonded SOI wafer","assignee":null,"inventors":[],"filing_date":"2015-02-09T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"The present invention is a method for manufacturing a bonded SOI wafer including: performing a thermal oxidation treatment including at least one of a thermal oxidation during temperature-rising and a thermal oxidation during temperature-falling with the use of a batch type heat treatment furnace, thereby forming a silicon oxide film in such a way that the oxide film buried in the delaminated bonded SOI wafer has a concentric oxide film thickness distribution, and subjecting the bonded SOI wafer after delaminating a bond wafer to a reducing heat treatment to make a film thickness range of the buried oxide film being smaller than a film thickness range before the reducing heat treatment. This provides a method for manufacturing a bonded SOI wafer which can suppress a variation of a radial distribution of a buried oxide film thickness caused by a reducing heat treatment performed after delaminating the SOI layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bonded SOI wafer","description":"The present invention is a method for manufacturing a bonded SOI wafer including: performing a thermal oxidation treatment including at least one of a thermal oxidation during temperature-rising and a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793154","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793154","citation_suggestion":"Patentable. \"Method for manufacturing bonded SOI wafer\" (US-9793154). https://patentable.app/patents/US-9793154","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793154","json":"https://patentable.app/api/llm-context/US-9793154","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:10.162Z"}