{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793169","patent":{"patent_number":"US-9793169","title":"Methods for forming mask layers using a flowable carbon-containing silicon dioxide material","assignee":null,"inventors":[],"filing_date":"2016-06-07T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"One method disclosed herein includes, among other things, forming a process layer on a substrate, forming a carbon-containing silicon dioxide layer above the process layer and forming a patterned mask layer above the carbon-containing silicon dioxide layer. The patterned mask layer exposes portions of the carbon-containing silicon dioxide layer. A material modification process is performed on the exposed portions of the carbon-containing silicon dioxide layer to generate modified portions, and the modified portions are removed. The process layer is etched using remaining portions of the carbon-containing silicon dioxide layer as an etch mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming mask layers using a flowable carbon-containing silicon dioxide material","description":"One method disclosed herein includes, among other things, forming a process layer on a substrate, forming a carbon-containing silicon dioxide layer above the process layer and forming a patterned mask","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793169","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793169","citation_suggestion":"Patentable. \"Methods for forming mask layers using a flowable carbon-containing silicon dioxide material\" (US-9793169). https://patentable.app/patents/US-9793169","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793169","json":"https://patentable.app/api/llm-context/US-9793169","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:31:58.962Z"}