{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793174","patent":{"patent_number":"US-9793174","title":"FinFET device on silicon-on-insulator and method of forming the same","assignee":null,"inventors":[],"filing_date":"2016-09-20T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device on silicon-on-insulator and method of forming the same","description":"A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793174","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793174","citation_suggestion":"Patentable. \"FinFET device on silicon-on-insulator and method of forming the same\" (US-9793174). https://patentable.app/patents/US-9793174","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793174","json":"https://patentable.app/api/llm-context/US-9793174","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:38.982Z"}