{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793267","patent":{"patent_number":"US-9793267","title":"Semiconductor device having gate structure with reduced threshold voltage and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-04-22T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A semiconductor device is provided, including: a substrate having a first area and a second area; several first gate structures formed at the first area, and at least one of the first gate structures including a first hardmask on a first gate, and the first gate structure having a first gate length; several second gate structures formed at the second area, and at least one of the second gate structures including a second hardmask on a second gate, and the second gate structure having a second gate length. The first gate length is smaller than the second gate length, and the first hardmask contains at least a portion of nitrogen (N2)-based silicon nitride (SiN) which is free of OH concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having gate structure with reduced threshold voltage and method for manufacturing the same","description":"A semiconductor device is provided, including: a substrate having a first area and a second area; several first gate structures formed at the first area, and at least one of the first gate structures ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793267","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793267","citation_suggestion":"Patentable. \"Semiconductor device having gate structure with reduced threshold voltage and method for manufacturing the same\" (US-9793267). https://patentable.app/patents/US-9793267","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793267","json":"https://patentable.app/api/llm-context/US-9793267","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:38:37.821Z"}