{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793269","patent":{"patent_number":"US-9793269","title":"Semiconductor device and method of manufacture","assignee":null,"inventors":[],"filing_date":"2014-12-19T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In accordance with some embodiments, conductive material is removed from over a first plurality of fins and second plurality of fins, wherein the first plurality of fins is located within a small gate length region and the second plurality of fins is located in a large gate length region. The removal is performed by initially performed a dry etch with a low pressure and a high flow rate of at least one etchant, which causes the conductive material to have a larger thickness over the second plurality of fins than over the first plurality of fins. As such, when a wet etch is utilized to remove a remainder of the conductive material, dielectric material between the second plurality of fins and the conductive material is not damaged."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacture","description":"In accordance with some embodiments, conductive material is removed from over a first plurality of fins and second plurality of fins, wherein the first plurality of fins is located within a small gate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793269","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793269","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacture\" (US-9793269). https://patentable.app/patents/US-9793269","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793269","json":"https://patentable.app/api/llm-context/US-9793269","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:53.722Z"}