{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793296","patent":{"patent_number":"US-9793296","title":"Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation","assignee":null,"inventors":[],"filing_date":"2016-10-17T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for fabricating substrate of a semiconductor device includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon layer to the dielectric layer; removing part of the second silicon layer and part of the dielectric layer to define a first region and a second region on the first silicon layer, wherein the remaining of the second silicon layer and the dielectric layer are on the second region; and forming an epitaxial layer on the first region of the first silicon layer, wherein the epitaxial layer and the second silicon layer comprise same crystalline orientation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation","description":"A method for fabricating substrate of a semiconductor device includes the steps of: providing a first silicon layer; forming a dielectric layer on the first silicon layer; bonding a second silicon lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793296","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793296","citation_suggestion":"Patentable. \"Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation\" (US-9793296). https://patentable.app/patents/US-9793296","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793296","json":"https://patentable.app/api/llm-context/US-9793296","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:17:38.206Z"}