{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793319","patent":{"patent_number":"US-9793319","title":"Multilayered seed structure for perpendicular MTJ memory element","assignee":null,"inventors":[],"filing_date":"2016-10-17T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof. The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilayered seed structure for perpendicular MTJ memory element","description":"The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multipl","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793319","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793319","citation_suggestion":"Patentable. \"Multilayered seed structure for perpendicular MTJ memory element\" (US-9793319). https://patentable.app/patents/US-9793319","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793319","json":"https://patentable.app/api/llm-context/US-9793319","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:38:03.772Z"}