{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793344","patent":{"patent_number":"US-9793344","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-01-20T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate insulating layer, a fourth semiconductor region of the second conductivity type, a first conductive unit and a first insulating layer. The fourth semiconductor region is provided selectively on the first semiconductor region. The fourth semiconductor region is separated from the second semiconductor region. At least a portion of the first conductive unit is surrounded with the fourth semiconductor region. At least a portion of the first insulating layer is provided between the first conductive unit and the fourth semiconductor region. A thickness of a portion of the first insulating layer is thinner than a film thickness of the gate insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793344","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793344","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9793344). https://patentable.app/patents/US-9793344","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793344","json":"https://patentable.app/api/llm-context/US-9793344","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:36:09.832Z"}