{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793365","patent":{"patent_number":"US-9793365","title":"Method for manufacturing silicon carbide semiconductor device having trench","assignee":null,"inventors":[],"filing_date":"2014-03-05T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A trench having an opening and a corner portion is formed in a silicon carbide substrate. A corner insulating film is formed to cover the corner portion. A gate insulating film is formed to cover a region extending from the opening to the corner portion. The step of forming the gate insulating film includes a step of thermally oxidizing the trench provided with the corner insulating film. The step of thermally oxidizing the trench includes a step of heating the silicon carbide substrate at not less than 1300° C. Accordingly, sufficient insulation reliability of the gate insulating film is secured near the opening of the trench while preventing dielectric breakdown of the gate oxide film at the bottom portion of the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing silicon carbide semiconductor device having trench","description":"A trench having an opening and a corner portion is formed in a silicon carbide substrate. A corner insulating film is formed to cover the corner portion. A gate insulating film is formed to cover a re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793365","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793365","citation_suggestion":"Patentable. \"Method for manufacturing silicon carbide semiconductor device having trench\" (US-9793365). https://patentable.app/patents/US-9793365","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793365","json":"https://patentable.app/api/llm-context/US-9793365","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:00:36.481Z"}