{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793385","patent":{"patent_number":"US-9793385","title":"Insulated gate bipolar transistor structure having low substrate leakage","assignee":null,"inventors":[],"filing_date":"2016-06-24T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS), and more particularly an insulated gate bipolar junction transistor (IGBT), is disclosed. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. The gate, source, second doped well, a portion of the first well, and a portion of the drain structure are surrounded by a deep trench isolation feature and an implanted oxygen layer in the silicon substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate bipolar transistor structure having low substrate leakage","description":"A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS), and more particularly an insulated gate bipolar junction transistor (IGBT), is disclosed. The device includes a semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793385","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793385","citation_suggestion":"Patentable. \"Insulated gate bipolar transistor structure having low substrate leakage\" (US-9793385). https://patentable.app/patents/US-9793385","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793385","json":"https://patentable.app/api/llm-context/US-9793385","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:29.986Z"}