{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793387","patent":{"patent_number":"US-9793387","title":"Semiconductor device including a vertical PN junction between a body region and a drift region","assignee":null,"inventors":[],"filing_date":"2016-08-17T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":24,"abstract":"A semiconductor device includes a drift region extending from a first surface into a semiconductor portion. A body region between two portions of the drift region forms a first pn junction with the drift region. A source region forms a second pn junction with the body region. The pn junctions include sections perpendicular to the first surface. Gate structures extend into the body regions and include a gate electrode. Field plate structures extend into the drift region and include a field electrode separated from the gate electrode. A gate shielding structure is configured to reduce a capacitive coupling between the gate structures and a backplate electrode directly adjoining a second surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a vertical PN junction between a body region and a drift region","description":"A semiconductor device includes a drift region extending from a first surface into a semiconductor portion. A body region between two portions of the drift region forms a first pn junction with the dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793387","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793387","citation_suggestion":"Patentable. \"Semiconductor device including a vertical PN junction between a body region and a drift region\" (US-9793387). https://patentable.app/patents/US-9793387","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793387","json":"https://patentable.app/api/llm-context/US-9793387","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:32.771Z"}