{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793389","patent":{"patent_number":"US-9793389","title":"Apparatus and method of fabrication for GaN/Si transistors isolation","assignee":null,"inventors":[],"filing_date":"2016-06-15T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"In one embodiment, a method of fabricating a semiconductor device having an isolated first transistor circuit and an isolated second transistor circuit is provided. The method comprises providing a silicon on insulator (SOI) wafer and fabricating an isolated first silicon region and an isolated second silicon region on the SOI wafer wherein each of the first silicon region and the second silicon region is bounded on its sides by a trench filled with insulator material. The method further comprises fabricating an active area comprising GaN on each of the first silicon region and the second silicon region to form the first transistor circuit and the second transistor circuit and fabricating source, drain, gate, and body connections for each of the first transistor circuit and the second transistor circuit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatus and method of fabrication for GaN/Si transistors isolation","description":"In one embodiment, a method of fabricating a semiconductor device having an isolated first transistor circuit and an isolated second transistor circuit is provided. The method comprises providing a si","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793389","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793389","citation_suggestion":"Patentable. \"Apparatus and method of fabrication for GaN/Si transistors isolation\" (US-9793389). https://patentable.app/patents/US-9793389","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793389","json":"https://patentable.app/api/llm-context/US-9793389","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:41.560Z"}