{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793392","patent":{"patent_number":"US-9793392","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-04-28T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A MOS gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an n+-type silicon carbide substrate, an n-type drift layer and a p-type base layer by epitaxial growth. On the base front surface, in an edge termination structure region, a step portion occurring between the p-type base layer and the n-type drift layer, and a flat portion farther outward than the step portion are provided. In a surface layer of the n-type drift layer, a p+-type base region constituting the MOS gate structure is provided so as to contact the p-type base layer. The outermost p+-type base region extends from an active region into the flat portion and the entire lower side of this portion is covered by an innermost p−-type region constituting an edge termination structure provided in the flat portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A MOS gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an n+-type silicon carbide substrate, an n-typ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793392","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793392","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9793392). https://patentable.app/patents/US-9793392","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793392","json":"https://patentable.app/api/llm-context/US-9793392","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:16:57.087Z"}