{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793408","patent":{"patent_number":"US-9793408","title":"Fin field effect transistor (FinFET)","assignee":null,"inventors":[],"filing_date":"2015-03-25T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between the upper portion and the lower portion acts as a diode. The FinFET further includes: at least one layer of high-k dielectric material (for example Si3N4) adjacent at least one side of the fin for redistributing a potential drop more evenly over the diode. Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor (FinFET)","description":"A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between the upper portion and the lower portion","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793408","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793408","citation_suggestion":"Patentable. \"Fin field effect transistor (FinFET)\" (US-9793408). https://patentable.app/patents/US-9793408","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793408","json":"https://patentable.app/api/llm-context/US-9793408","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:50.573Z"}